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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT4124 FEATURES Power dissipation PCM 0.33W Tamb=25ae(c) Collector current ICM .2A 0 Collector-base voltage V (BR) CBO 30V Operating and storage junction temperature range T J T stg: -55aeto +150ae Unit : mm TRANSISTORNPN (c) SOT 23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS Tamb=25ae Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE VCE(sat) VBE(sat) unless Test otherwise specified(c) MIN 30 25 5 0.05 0.05 120 360 0.3 0.95 300 V V MHz TYP MAX UNIT V V V |I A |I A conditions Ic=10|I A IE=0 Ic= 1mAIB=0 IE= 10|I AIC=0 VCB= 20 V , IE=0 VEB= 3V , IC=0 VCE= 1V, IC= 2mA IC=50 mA, IB= 5mA IC=50 mA, IB= 5mA VCE=20V, IC= 10mA f =100MHz fT Marking FMMT4124 2C |
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